In　this　work,　a　vertical　gallium　oxide　(Ga2O3)　Schottky　barrier　diode　(SBD)　with　suspended　field　plate-assisted　shallow　mesa　termination　(SFPM-SBD)　is　proposed　and　fabricated.　The　suspended　field　plate　is　achieved　by　using　Cl2　in　the　ICP　etching　process　to　facilitate　isotropic　etching　of　Ga2O3.　Compared　with　shallow　mesa　SBD,　the　introduction　of　SFPM　can　further　optimize　the　electric　field　(E_Field)　distribution.　Consequently,　a　high　breakdown　voltage　(BV)　of　over　3.5　kV　and　a　low　specific　on-resistance　of　5.77　mΩ　·cm2are　achieved,　resulting　in　a　power　figure　of　merit　(PFOM)　＞2.12　GW/cm2.　Furthermore,　the　large-area　device　with　3　×　3　mm2　is　fabricated,　achieving　a　BV　exceeding　1.5　kV　and　a　high　forward　current　of　12　A　at　2　V.　The　simplified　fabrication　process　of　the　SFPM-SBD,　combined　with　its　outstanding　performance,　makes　it　a　promising　candidate　for　multikilovolt　and　ampere-class　applications.　©　1963-2012　IEEE.