The　mechanism　of　material　removal　in　chemical　mechanical　polishing　(CMP)　process　is　closely　related　to　polishing　fluid　environment.　The　reactive　force　field　(ReaxFF)　is　employed　to　analyze　the　chemical　reactions　and　polishing　behavior　on　the　SiC　surface,　in　order　to　investigate　the　friction　chemical　mechanism　during　diamond　polishing　in　an　alcoholic　environment.　Moreover,　radial　distribution　function　curves　of　various　types　of　chemical　bonds　(Si-O,　C-O)　generated　after　CMP　process　of　SiC　are　depicted,　and　bonding　law　is　derived.　Additionally,　the　effect　of　abrasive　polishing　speed　on　material　removal　and　processing　effect　on　silicon　carbide　workpiece　are　also　investigated.　SiC　is　prone　to　being　oxidized　by　hydroxyl　groups　in　the　polishing　liquid,　forming　oxides　such　as　SiO　and　Si4C4-xO2,　which　are　easier　to　remove.　These　oxides　can　be　removed　with　lower　friction.　Optimal　polishing　results　are　achieved　using　ethanol.　Corresponding　roughness　Ra　of　machined　surface　is　only　0.09　nm,　which　is　consistent　with　experimental　results.　Removal　mechanisms　of　Si　and　C　atoms　in　silicon　carbide　under　the　coupling　of　chemical　reaction　and　mechanical　friction,　respectively,　are　elucidated.　This　study　elucidates　the　mechanism　of　chemical　mechanical　polishing　in　alcohol　environment,　providing　theoretical　foundation　for　enhancing　CMP　process.　©　2025　Elsevier　Ltd