Gallium　nitride　(GaN)　crystals　have　gained　extensive　usage　in　diverse　fields　such　as　new　energy　vehicles,　aero-space　and　military　applications.　However,　the　inherent　characteristics　of　GaN,　characterized　by　its　hardness　and　brittleness,　adversely　affect　its　processing　efficiency.　To　overcome　this　limitation　and　achieve　efficient　and　robust　removal　of　GaN,　it　is　paramount　to　investigate　the　influence　of　indenter　shape　on　material　damage　during　nanofabrication.　Molecular　dynamics　simulations　are　employed　to　simulate　indentation　and　scratching　experiments　on　the　Ga　surface　of　GaN.　The　aim　is　to　analyze　the　influence　of　employing　both　spherical　and　Berkovich　indenters　with　different　orientation　to　distribution　and　progression　of　atomic　packing,　crystal　slip　and　dislocations　throughout　the　machining　process.　It　turns　out　that　the　distribution　of　edge　dislocations　is　predominantly　influenced　by　the　contact　interface　between　the　indenter＇s　periphery　and　the　material　during　the　nanoindentation　process.　In　the　case　of　the　spherical　indenter,　atomic　slip　predominantly　occurs　along　＜11-20＞　crystallo-graphic　direction　families.　For　Berkovich　indenter,　the　sharp　edges　are　effective　in　suppressing　slip　and　dislocation　expansion　of　atoms　in　that　direction.　When　the　one　edge　of　the　indenter　face　to　the　[11-20]　direction,　atomic　slip　and　dislocation　phenomena　are　mitigated,　and　slip　and　atomic　packing　are　primarily　observed　perpendicular　to　the　three　edges　of　the　indenter.　During　the　scratching　process,　edge　dislocations　undergo　three　main　processes:　initial　generation,　extended　formation　and　destructive　reorganization.　The　spherical　indenter　produces　the　most　dislocations,　whereas　the　Berkovich　indenter　has　moderate　dislocations　when　the　sharp　angle　is　forward,　and　the　subsurface　amorphous　deformation　zones　are　uniform,　with　less　atomic　packing.　©　2025,　Materials　China.　All　rights　reserved.