This　study　introduces　the　current　transport　mechanism　in　electron　mobility　transistors　(HEMTs),　focusing　specifically　on　the　operating　state　and　current　transfer　process　of　multi　two-dimensional　electron　gas　(2DEG)　channels.　In　comparison　to　single-channel　HEMT,　this　multi-channel　HEMT　increases　the　current　density　by　over　six　times,　offering　significant　potential　for　devices　in　the　high-power　domain.　It　further　presents　an　equivalent　circuit　model.　This　model　corresponds　closely　to　the　proposed　multi-channel　structure　and　has　been　thoroughly　validated.　This　study　provides　an　explanation　of　the　current　transfer　mechanism　within　the　multi　channels,　paving　a　way　for　advancements　in　high-power　device　applications.　©　Published　under　licence　by　IOP　Publishing　Ltd.