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author:

Chen Shan-Ci (Chen Shan-Ci.) [1] | Zhang Senya (Zhang Senya.) [2] | Zheng Qingdong (Zheng Qingdong.) [3]

Indexed by:

EI Scopus SCIE CSCD

Abstract:

Recently, perovskite solar cells (PVSCs) based on CsPbI2Br have attracted increasing attention owing to their good balance between efficiency and stability. Solution-processed CsPbI2Br perovskites usually contain various defects which need passivation for PVSCs with high-performance as well as good stability. Since the degradation of perovskite films usually begins at the grain boundaries, here we report a facile defect passivation strategy by spin-coating a KF solution on the CsPbI2Br perovskite surface. The deposited KF salt mostly locates at the grain boundaries of the perovskite surface, resulting in PVSCs with improved stability. Both steady-state and time-resolved photoluminescence results suggest that the defects of perovskite were significantly passivated by KF treatment. Consequently, the best-performance PVSC based on CsPbI2Br with KF treatment shows an enhanced power conversion efficiency (PCE) of 15.01% with a larger open circuit voltage (V-OC) of 1.26 V in comparison with the pristine CsPbI2Br-based counterpart which exhibits an inferior PCE of 14.14% with a V-OC of 1.18 V.

Keyword:

defect passivation energy conversion fluorides grain boundary perovskites

Community:

  • [ 1 ] [Chen Shan-Ci]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
  • [ 2 ] [Zhang Senya]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
  • [ 3 ] [Zheng Qingdong]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
  • [ 4 ] [Zhang Senya]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China

Reprint 's Address:

  • [Zheng Qingdong]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China

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Source :

SCIENCE CHINA-MATERIALS

ISSN: 2095-8226

CN: 10-1236/TB

Year: 2020

Issue: 5

Volume: 63

Page: 719-727

8 . 2 7 3

JCR@2020

6 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:196

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 30

SCOPUS Cited Count: 30

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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