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author:

Chen, Biaowei (Chen, Biaowei.) [1] | Lin, Peijie (Lin, Peijie.) [2] (Scholars:林培杰) | Lai, Yunfeng (Lai, Yunfeng.) [3] (Scholars:赖云锋) | Cheng, Shuying (Cheng, Shuying.) [4] (Scholars:程树英) | Chen, Zhicong (Chen, Zhicong.) [5] (Scholars:陈志聪) | Wu, Lijun (Wu, Lijun.) [6] (Scholars:吴丽君)

Indexed by:

Scopus SCIE

Abstract:

Improving the accuracy of very-short-term (VST) photovoltaic (PV) power generation prediction can effectively enhance the quality of operational scheduling of PV power plants, and provide a reference for PV maintenance and emergency response. In this paper, the effects of different meteorological factors on PV power generation as well as the degree of impact at different time periods are analyzed. Secondly, according to the characteristics of radiation coordinate, a simple radiation classification coordinate (RCC) method is proposed to classify and select similar time periods. Based on the characteristics of PV power time-series, the selected similar time period dataset (include power output and multivariate meteorological factors data) is reconstructed as the training dataset. Then, the long short-term memory (LSTM) recurrent neural network is applied as the learning network of the proposed model. The proposed model is tested on two independent PV systems from the Desert Knowledge Australia Solar Centre (DKASC) PV data. The proposed model achieving mean absolute percentage error of 2.74-7.25%, and according to four error metrics, the results show that the robustness and accuracy of the RCC-LSTM model are better than the other four comparison models.

Keyword:

long short-term memory photovoltaic power generation similarity time period very short-term Power prediction

Community:

  • [ 1 ] [Chen, Biaowei]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Lin, Peijie]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Lai, Yunfeng]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Cheng, Shuying]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Chen, Zhicong]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Wu, Lijun]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Chen, Biaowei]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 8 ] [Lin, Peijie]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 9 ] [Lai, Yunfeng]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 10 ] [Cheng, Shuying]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 11 ] [Chen, Zhicong]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 12 ] [Wu, Lijun]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China
  • [ 13 ] [Chen, Biaowei]Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 21316, Jiangsu, Peoples R China
  • [ 14 ] [Lin, Peijie]Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 21316, Jiangsu, Peoples R China
  • [ 15 ] [Lai, Yunfeng]Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 21316, Jiangsu, Peoples R China
  • [ 16 ] [Cheng, Shuying]Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 21316, Jiangsu, Peoples R China
  • [ 17 ] [Chen, Zhicong]Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 21316, Jiangsu, Peoples R China
  • [ 18 ] [Wu, Lijun]Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 21316, Jiangsu, Peoples R China

Reprint 's Address:

  • 林培杰

    [Lin, Peijie]Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Lin, Peijie]Fuzhou Univ, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Peoples R China;;[Lin, Peijie]Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 21316, Jiangsu, Peoples R China

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Related Keywords:

Source :

ELECTRONICS

ISSN: 2079-9292

Year: 2020

Issue: 2

Volume: 9

2 . 3 9 7

JCR@2020

2 . 6 0 0

JCR@2023

ESI Discipline: ENGINEERING;

ESI HC Threshold:132

JCR Journal Grade:3

Cited Count:

WoS CC Cited Count: 55

SCOPUS Cited Count: 56

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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