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author:

Lai, Dengxiao (Lai, Dengxiao.) [1] | Li, Enlong (Li, Enlong.) [2] | Yan, Yujie (Yan, Yujie.) [3] | Liu, Yaqian (Liu, Yaqian.) [4] | Zhong, Jianfeng (Zhong, Jianfeng.) [5] | Lv, Dongxu (Lv, Dongxu.) [6] | Ke, Yudan (Ke, Yudan.) [7] | Chen, Huipeng (Chen, Huipeng.) [8] (Scholars:陈惠鹏) | Guo, Tailiang (Guo, Tailiang.) [9] (Scholars:郭太良)

Indexed by:

EI Scopus SCIE

Abstract:

Recently, the application of environment-friendly materials in electronic devices has attracted more and more attention, and become an important trend in the future development of electronic devices. Hydrogel as a kind biocompatible and biodegradable material with rich water, is ubiquitous in biological system. For the first time, we fabricated bottom coupled organic synaptic transistor using gelatin hydrogel as the dielectric material, which exhibited good transistor performance with low operating voltage. More importantly, some crucial synaptic functions, such as excitatory postsynaptic current (EPSC)/inhibitory postsynaptic current (IPSC), paired-pulse facilitation (PPF)/paired-pulse depression (PPD) and high-pass filtering characteristics, were successfully stimulated in our device. In addition, the transition from sensory memory (SM) to short-term memory (STM) and from STM to long-term memory (LTM) based on the multistore model in the human brain was also observed in our device. Moreover, we stimulated the classical conditional Pavlov's dog experiments in the device. The gelatin hydrogel-gated synaptic transistor proposed in this work shows great potential in biocompatible synaptic electronics, which inspires a new direction for building future environmental neuromorphic electronics.

Keyword:

Electrical double layer Environment-friendly Gelatin hydrogel Organic transistor Synaptic function

Community:

  • [ 1 ] [Lai, Dengxiao]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 2 ] [Li, Enlong]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 3 ] [Yan, Yujie]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 4 ] [Liu, Yaqian]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 5 ] [Zhong, Jianfeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 6 ] [Lv, Dongxu]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 7 ] [Ke, Yudan]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 8 ] [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 9 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China

Reprint 's Address:

  • 陈惠鹏

    [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China

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Source :

ORGANIC ELECTRONICS

ISSN: 1566-1199

Year: 2019

Volume: 75

3 . 3 1

JCR@2019

2 . 7 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:138

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 35

SCOPUS Cited Count: 37

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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