Perovskite　light-emitting　diodes　(PeLEDs)　have　been　intensively　researched　in　recent　years,　and　their　rapid　evolution　of　efficiency　has　resulted　in　their　becoming　a　member　of　the　family　of　devices　with　external　quantum　efficiencies　(EQEs)　＞　20%.　In　this　evolution　process,　surface　engineering　was　found　to　be　a　key　factor　for　obtaining　the　high-efficiency　PeLEDs　because　of　its　effects　on　the　state　and　the　density　of　charge　carriers,　the　density　of　defects,　the　transport　and　the　injection　of　charge,　etc.　In　this　review,　we　mainly　focus　on　recent　works　on　highly　efficient　PeLEDs　based　on　perovskite　3D/quasi-2D/quantum　dots　and　try　to　discover　the　reasons　behind　their　high　performance.　With　continuous　optimization　of　materials　and　devices,　especially　with　surface　engineering,　the　efficiency　of　PeLEDs　is　expected　to　continue　growing　and　to　reach　an　exciting　new　level　in　the　near　future.