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author:

He, Jiawei (He, Jiawei.) [1] | Li, Guoli (Li, Guoli.) [2] | Lv, Yawei (Lv, Yawei.) [3] | Wang, Chunlan (Wang, Chunlan.) [4] | Liu, Chuansheng (Liu, Chuansheng.) [5] | Li, Jinchai (Li, Jinchai.) [6] | Flandre, Denis (Flandre, Denis.) [7] | Chen, Huipeng (Chen, Huipeng.) [8] (Scholars:陈惠鹏) | Guo, Tailiang (Guo, Tailiang.) [9] (Scholars:郭太良) | Liao, Lei (Liao, Lei.) [10]

Indexed by:

EI Scopus SCIE

Abstract:

Here, the bilayer InGaZnO/In2O3 thin-film transistors (TFTs) are deposited by radio-frequency magnetron sputtering at room temperature. A high field-effect mobility (mu(FE)) of 64.4 cm(2) V-1 s(-1) and a small subthreshold swing (SS) of 204 mV per decade are achieved in the bilayer-stack TFTs fabricated upon SiO2/Si substrate, with large improvement compared to the single-layer InGaZnO and In2O3 TFTs. Implementing HfO2 and Si3N4 as high-k gate dielectrics, mu(FE) and SS are correspondingly enhanced to be 67.5 and 79.1 cm(2) V-1 s(-1), and 85 and 92 mV per decade in the bilayer TFTs. Defect self-compensation effect is also revealed, i.e., (In)(+) + (O)(-) -> In-O, while, respectively, considering the indium- and oxygen-related defects in InGaZnO and In2O3 and exploring the numerical simulations in SILVACO/Atlas (for electrical performance) and Quantum Espresso (for physical analysis). The In-O formation can result in a significant reduction in defect density (validated by the X-ray photoelectron spectra and low-frequency noise characterizations) and therefore improvement of mu(FE) and SS in the bilayer-stack TFT. The important role of defect self-compensation mechanism while combining different individual channel layers in the oxide semiconducting TFTs is underlined and highly potential application in next-generation, fast-speed flexible displays is shown.

Keyword:

amorphous oxide semiconductor bilayer stack defect self-compensation high mobility thin-film transistor

Community:

  • [ 1 ] [He, Jiawei]Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China
  • [ 2 ] [Liu, Chuansheng]Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China
  • [ 3 ] [Li, Jinchai]Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China
  • [ 4 ] [Liao, Lei]Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China
  • [ 5 ] [Li, Guoli]Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronanooptoelect Devices, Changsha 410082, Hunan, Peoples R China
  • [ 6 ] [Lv, Yawei]Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronanooptoelect Devices, Changsha 410082, Hunan, Peoples R China
  • [ 7 ] [Flandre, Denis]Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronanooptoelect Devices, Changsha 410082, Hunan, Peoples R China
  • [ 8 ] [Liao, Lei]Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronanooptoelect Devices, Changsha 410082, Hunan, Peoples R China
  • [ 9 ] [Wang, Chunlan]Xian Polytech Univ, Sch Sci, Xian 710048, Shaanxi, Peoples R China
  • [ 10 ] [Flandre, Denis]Catholic Univ Louvain, Inst Informat & Commun Technol Elect & Appl Math, B-1348 Louvain La Neuve, Belgium
  • [ 11 ] [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Fujian, Peoples R China
  • [ 12 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Fujian, Peoples R China

Reprint 's Address:

  • [Liao, Lei]Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China;;[Li, Guoli]Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronanooptoelect Devices, Changsha 410082, Hunan, Peoples R China;;[Liao, Lei]Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronanooptoelect Devices, Changsha 410082, Hunan, Peoples R China

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Source :

ADVANCED ELECTRONIC MATERIALS

ISSN: 2199-160X

Year: 2019

Issue: 6

Volume: 5

6 . 5 9 3

JCR@2019

5 . 3 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:236

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 43

SCOPUS Cited Count: 38

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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