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Abstract:
Here, the bilayer InGaZnO/In2O3 thin-film transistors (TFTs) are deposited by radio-frequency magnetron sputtering at room temperature. A high field-effect mobility (mu(FE)) of 64.4 cm(2) V-1 s(-1) and a small subthreshold swing (SS) of 204 mV per decade are achieved in the bilayer-stack TFTs fabricated upon SiO2/Si substrate, with large improvement compared to the single-layer InGaZnO and In2O3 TFTs. Implementing HfO2 and Si3N4 as high-k gate dielectrics, mu(FE) and SS are correspondingly enhanced to be 67.5 and 79.1 cm(2) V-1 s(-1), and 85 and 92 mV per decade in the bilayer TFTs. Defect self-compensation effect is also revealed, i.e., (In)(+) + (O)(-) -> In-O, while, respectively, considering the indium- and oxygen-related defects in InGaZnO and In2O3 and exploring the numerical simulations in SILVACO/Atlas (for electrical performance) and Quantum Espresso (for physical analysis). The In-O formation can result in a significant reduction in defect density (validated by the X-ray photoelectron spectra and low-frequency noise characterizations) and therefore improvement of mu(FE) and SS in the bilayer-stack TFT. The important role of defect self-compensation mechanism while combining different individual channel layers in the oxide semiconducting TFTs is underlined and highly potential application in next-generation, fast-speed flexible displays is shown.
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ADVANCED ELECTRONIC MATERIALS
ISSN: 2199-160X
Year: 2019
Issue: 6
Volume: 5
6 . 5 9 3
JCR@2019
5 . 3 0 0
JCR@2023
ESI Discipline: MATERIALS SCIENCE;
ESI HC Threshold:236
JCR Journal Grade:1
CAS Journal Grade:2
Cited Count:
WoS CC Cited Count: 43
SCOPUS Cited Count: 38
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 1
Affiliated Colleges: