Interfacial　engineering　at　the　dielectric/semiconductor　interface　is　highly　crucial　for　fabricating　organic　field-effect　transistors　with　high　performance.　In　this　study,　a　bilayer　MXene/semiconductor　configuration　is　introduced　to　fabricate　a　high-performance　n-type　transistor,　where　electrical　charges　are　formed　and　modulated　at　the　SiO2/semiconductor　interface,　and　MXene　nanosheets　serve　as　the　primary　electrical　charge　channel　due　to　their　high　mobility　and　long　lateral　size.　The　electrical　performance　is　optimized　by　adjusting　the　degree　of　connectivity　of　the　MXene　nanosheets.　The　proposed　MXene/poly{[N,N＇-bis(2-octyl-do-decyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5＇-(2,2＇-bithiophene)}　(N2200)　transistors　show　boosted　n-type　characteristics,　including　a　100-fold　increase　in　field-effect　mobility,　a　large　ON/OFF　ratio　of　104,　and　a　small　subthreshold　swing　of　0.65　V　dec(-1),　all　of　which　are　significantly　improved　compared　with　single-layer　N2200　transistors.　The　high　performance　of　the　two-dimensional　MXene　nanochannel　is　due　to　its　electronegativity　and　high　mobility.　The　electronegativity　significantly　enhances　electron　transfer　from　N2200　to　the　MXene　channel,　where　they　are　efficiently　transported　along　the　MXene　channel.　Interestingly,　the　MXene/p-type　semiconductor　transistors　show　suppressed　p-type　performance　because　of　the　highly　negative　MXene　nanosheets.　Additionally,　the　proposed　bilayer　MXene/n-type　semiconductor　configuration　shows　a　good　configuration　generality　and　improved　performance.　These　findings　demonstrate　the　feasibility　of　fabricating　high-performance　n-type　transistors　using　a　bilayer　MXene/semiconductor　combination.