Flexible　floating-gate　organic　transistor　memory　(FGOTM)　is　a　potential　candidate　for　emerging　memory　technologies.　Unfortunately,　conventional　planar　FGOTM　suffers　from　weak　driving　ability　and　insufficient　mechanical　flexibility,　which　limits　its　commercial　application.　In　this　work,　a　novel　flexible　vertical　FGOTM　(VFGOTM)　is　reported.　Benefitting　from　new　vertical　architecture,　VFGOTM　provides　ultrashort　channel　length　to　afford　an　extremely　high　current　density.　Meanwhile,　VFGOTM　devices　exhibit　excellent　memory　performance　and　outstanding　retention　property.　The　memory　properties　of　VFGOTM　devices　are　comparable　or　even　better　than　traditional　planar　FGOTM　and　much　better　than　the　reported　organic　nonvolatile　memory　with　vertical　transistor　structures.　More　importantly,　organic　nonvolatile　memory　with　vertical　transistor　structures　is　investigated　for　the　first　time　on　a　flexible　substrate.　The　results　show　that　VFGOTM　architecture　allows　vertical　current　flow　across　the　channel　layer　to　effectively　eliminate　the　effect　of　mechanical　bending　during　current　transport,　which　significantly　improves　the　mechanical　stability　of　the　flexible　VFGOTM.　Hence,　with　a　combination　of　excellent　driving　ability,　memory　performance,　and　mechanical　stability,　VFGOTM　devices　meet　the　practical　requirements　for　high　performance　memory　applications,　which　have　great　potential　for　the　application　in　a　wide　range　of　flexible　and　wearable　electronics.