Inkjet-printed　In-Ga-Zn　oxide　(IGZO)　thin-film　transistors　(TFTs)　have　been　fabricated　at　low　temperature　using　laser　spike　annealing　(LSA)　treatment.　Coffee-ring　effects　during　the　printing　process　were　eliminated　to　form　uniform　IGZO　films　by　simply　increasing　the　concentration　of　solute　in　the　ink.　The　impact　of　LSA　on　the　TFT　performance　was　studied.　The　field-effect　mobility,　threshold　voltage,　and　on/off　current　ratio　were　greatly　influenced　by　the　LSA　treatment.　With　laser　scanning　at　1　mm/s　for　40　times,　the　30-nm-thick　IGZO　TFT　baked　at　200A　degrees　C　showed　mobility　of　1.5　cm(2)/V　s,　threshold　voltage　of　-8.5　V,　and　on/off　current　ratio　＞　10(6).　Our　findings　demonstrate　the　feasibility　of　rapid　LSA　treatment　of　low-temperature　inkjet-printed　oxide　semiconductor　transistors,　being　comparable　to　those　obtained　by　conventional　high-temperature　annealing.