A　key　step　toward　commercialization　of　organic　thin-film　transistors　(OTFTs)　is　to　manufacture　large-area　OTFT　arrays　with　desired　uniform　device　performance.　In　this　work,　for　the　first　time,　solution-processed　OTFT　arrays　were　fabricated　with　the　assistance　of　laser　ablation.　The　source　drain　electrodes　and　the　whole　devices　were　patterned　by　precise　control　of　laser　intensity　and　process　path.　Compared　with　traditional　methods,　this　approach　significantly　simplifies　the　fabrication　process　of　OTFT　arrays　with　high　quality　and　high　yield.　A　careful　selection　of　laser　processing　parameters　is　key　to　obtaining　high　quality　and　high　performance　OTFT　arrays.　The　grazing　incidence　X-ray　diffraction　experiments　and　device　performance　tests　ensured　the　selection　of　proper　laser　ablation　intensity.　Eventually,　the　OTFT　arrays　on　silicon　wafer　and　ITO　glass　exhibited　uniform　electrical　characteristics　with　the　mean　mobility　of　0.16　and　0.10　cm(2)　s(-1),　respectively.　These　results　demonstrated　that　the　laser　ablation　process　provides　a　promising　tool　to　simplify　the　fabrication　of　solution-processed　OTFT　arrays　with　low　cost　and　high　yield,　which　has　great　potential　in　upscaling　of　high　performance　OTFT　arrays　for　display　and　circuits.