Multilevel　resistive　memory　devices　with　an　intermediate　state　were　fabricated　utilizing　a　poly(methylmethacrylate)　(PMMA)　layer　sandwiched　between　double-stacked　PMMA　layers　containing　CdSe/ZnS　core　shell　quantum　dots　(QDs).　The　current　voltage　(I-V)　curves　on　a　Al/[PMMA:CdSe/ZnS　QD]/PMMA/[PMMA:CdSe/ZnS　QD]/indium-tin-oxide/glass　device　at　low　applied　voltages　showed　current　bistabilities　with　three　states,　indicative　of　multilevel　characteristics.　A　reliable　intermediate　state　was　realized　under　positive　and　negative　applied　voltages.　The　carrier　transport　and　the　memory　mechanisms　of　the　devices　were　described　on　the　basis　of　the　I-V　curves　and　energy　band　diagrams,　respectively.　The　write-read-erase-read-erase-read　sequence　of　the　devices　showed　rewritable,　nonvolatile,　multilevel,　and　memory　behaviors.　The　currents　as　functions　of　the　retention　time　showed　that　three　current　states　were　maintained　for　retention　times　larger　than　1　x　10(4)　s,　indicative　of　the　good　stability　of　the　devices.　(C)　2015　Elsevier　B.V.　All　rights　reserved.