The　temperature　dependence　of　the　mode　splitting　induced　by　birefringence　in　an　InGaAs/GaAs/AlGaAs　vertical-cavity　surface-emitting　laser　has　been　studied　by　reflectance　difference　spectroscopy　at　different　temperatures　ranging　from　80　to　330　K.　The　anisotropic　broadening　width　and　the　anisotropic　integrated　area　of　the　cavity　mode　under　different　temperatures　are　also　determined.　The　relation　between　the　mode　splitting　and　the　birefringence　is　obtained　by　theoretical　calculation　using　a　Jones　matrix　approach.　The　temperature　dependence　of　the　energy　position　of　the　cavity　mode　and　the　quantum　well　transition　are　also　determined　by　nearly　normal　reflectance　and　photoluminescence,　respectively.　(C)　2013　Optical　Society　of　America