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author:

Chen, Leifeng (Chen, Leifeng.) [1] | Wang, Lei (Wang, Lei.) [2] | Yu, Xuegong (Yu, Xuegong.) [3] | Zhang, Shijun (Zhang, Shijun.) [4] | Li, Dan (Li, Dan.) [5] | Xu, Chen (Xu, Chen.) [6] | Zeng, Lingsheng (Zeng, Lingsheng.) [7] | Zhou, Shu (Zhou, Shu.) [8] | Zhao, Jianjing (Zhao, Jianjing.) [9] | Guo, Fan (Guo, Fan.) [10] | Hu, Liqin (Hu, Liqin.) [11] | Yang, Deren (Yang, Deren.) [12]

Indexed by:

EI Scopus SCIE

Abstract:

The overall process of field emission can be dominated by the contact resistance between the single wall carbon nanotubes (SWCNTs) and the substrate. In order to reduce the contact resistance, we present a wet chemical process of constructing Ag-SWCNTs hybrid nanostructure. Constructing Ag-SWCNTs emitters could improve the electrical contact by increasing the contact area between SWCNTs and substrate. Contact resistance is greatly reduced compared to that of pristine SWCNTs. Field emission properties of Ag-SWCNTs hybrid emitters including current density and emitting image are remarkably improved. Field emission properties based on the modified Fowler-Nordheim (F-N) equation are discussed. Our studies show that this method can enhance the field emission properties of the SWCNTs by improving the contact resistance and is a promising way for mass production of SWCNTs for field emission display. (C) 2012 Elsevier B.V. All rights reserved.

Keyword:

Ag nanoparticles Contact resistance Field emission Hybrid nanostructure Single wall carbon nanotubes (SWCNTs)

Community:

  • [ 1 ] [Chen, Leifeng]Hangzhou Dianzi Univ, Coll Mat & Environm Engn, Hangzhou 310018, Peoples R China
  • [ 2 ] [Chen, Leifeng]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 3 ] [Wang, Lei]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 4 ] [Yu, Xuegong]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 5 ] [Zhang, Shijun]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 6 ] [Li, Dan]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 7 ] [Xu, Chen]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 8 ] [Zeng, Lingsheng]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 9 ] [Zhou, Shu]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 10 ] [Zhao, Jianjing]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 11 ] [Yang, Deren]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 12 ] [Guo, Fan]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350002, Peoples R China
  • [ 13 ] [Hu, Liqin]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350002, Peoples R China

Reprint 's Address:

  • [Yang, Deren]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

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Source :

APPLIED SURFACE SCIENCE

ISSN: 0169-4332

Year: 2013

Volume: 265

Page: 187-191

2 . 5 3 8

JCR@2013

6 . 3 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 15

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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