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author:

Wang, S. H. (Wang, S. H..) [1] (Scholars:王少昊)

Indexed by:

CPCI-S

Abstract:

We numerically investigated the relationship between the transverse waveguide geometry and the continuous-wave Raman gain in silicon-on-insulator wire waveguide Raman amplifiers. A Raman gain enhancement can be achieved in waveguides with small effective mode area.

Keyword:

Raman Amplification Silicon photonics

Community:

  • [ 1 ] Fuzhou Univ, Dept Microelect, Fuzhou 350108, Peoples R China

Reprint 's Address:

  • 王少昊

    [Wang, S. H.]Fuzhou Univ, Dept Microelect, Qi Shan Campus, Fuzhou 350108, Peoples R China

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Source :

2013 12TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS AND NETWORKS (ICOCN)

Year: 2013

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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