We　report　the　effects　of　microcell　layout　on　the　performances　of　GaN-based　highvoltage　light-emitting　diodes　(HV-LEDs).　Compared　with　samples　with　an　S-type　layout　pattern,　it　was　found　that　the　samples　with　an　I-type　layout　pattern　exhibit　smaller　forward　voltage,　larger　light　output　power,　lower　thermal　temperature,　and　better　wall-plug　efficiency　(WPE).　It　was　also　found　that　we　could　further　improve　the　performances　of　HV-LED　chips　by　introducing　extra　metal　fingers　to　enhance　current　spreading.　Compared　with　the　S-type　sample　without　metal　fingers,　we　could　reduce　the　efficiency　droop　from　38.6%　to　14.8%　by　using　an　I-type　sample　with　metal　fingers.　Furthermore,　it　was　found　that　WPE　reduced　by　around　40%　after　a　1000　h　aging　test　for　the　S-type　sample　without　metal　fingers.　In　contrast,　almost　no　decrease　in　WPE　could　be　observed　from　the　I-type　sample　with　metal　fingers　after　the　same　aging　time.　©　2015　Society　of　Photo-Optical　Instrumentation　Engineers.