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author：

Song, Kaixin (Song, Kaixin.) [1] | Zhang, Fangfang (Zhang, Fangfang.) [2] | Chen, Daqin (Chen, Daqin.) [3] | Wu, Song (Wu, Song.) [4] | Zheng, Peng (Zheng, Peng.) [5] | Huang, Qingming (Huang, Qingming.) [6] | Jiang, Jun (Jiang, Jun.) [7] | Xu, Junming (Xu, Junming.) [8] | Qin, Huibin (Qin, Huibin.) [9]

Indexed by：

EI

Abstract：

Si3N4　modified　Li2Sr0.995SiO4:0.005Eu2+　(Li2Sr0.995SiO4-3x/2Nx:0.005Eu2+)　phosphors　were　synthesized　with　the　conventional　solid-state　reaction　in　the　reduced　atmosphere.　The　crystal　structure　and　vibrational　modes　were　analyzed　by　X-ray　diffraction,　Raman　scattering　spectroscopy　and　Rietveld　crystal　structure　refinement.　Photoluminescence　(PL)　and　photoluminescence　excitation　(PLE)　spectra　showed　that　Li2Sr0.995SiO4-3x/2Nx:0.005Eu2+　powder　exhibited　a　broad　yellow　emission　band　centered　at　560　nm　under　the　excitation　of　460　nm　visible　light,　due　to　the　4f65d1　→　4f7　transition　of　Eu2+.　The　partial　nitridation　of　Li2Sr0.995SiO4-3x/2Nx:0.005Eu2+　(x　=　0.01)　phosphors　led　to　a　large　enhancement　in　the　luminescence　intensity,　as　much　as　190%.　At　the　same　time,　the　fluorescence　decay　behavior　curves　further　showed　that　the　photoluminescence　efficiencies　of　Li2Sr0.995SiO4-3x/2Nx:0.005Eu2+　phosphors　were　enhanced　by　addition　of　Si3N4.　The　temperature　quenching　characteristics　confirmed　that　the　oxynitride　based　Li2Sr0.995SiO4-3x/2Nx:0.005Eu2+　showed　slightly　higher　stability.　It　is　implied　that　Li2Sr0.995SiO4-3x/2Nx:0.005Eu2+　phosphors　had　a　possible　potential　application　on　white　LEDs　to　match　blue　light　chips.　©　2015　Elsevier　Ltd.　All　rights　reserved.

Keyword：

Aluminum nitride Crystal structure Doping (additives) Europium compounds Light Lithium compounds Optical properties Phosphors Photoluminescence Rietveld refinement Silicon compounds Solid state reactions Strontium compounds X ray diffraction

Community：

  • [ 1 ] [Song, Kaixin]College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou; 310018, China
  • [ 2 ] [Zhang, Fangfang]College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou; 310018, China
  • [ 3 ] [Chen, Daqin]College of Materials Sciences and Engineering, Hangzhou Dianzi University, Hangzhou; 310018, China
  • [ 4 ] [Wu, Song]College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou; 310018, China
  • [ 5 ] [Zheng, Peng]College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou; 310018, China
  • [ 6 ] [Huang, Qingming]Instrument Analysis and Testing Center, Fuzhou University, Fuzhou; 350002, China
  • [ 7 ] [Jiang, Jun]Ningbo Institute of Materials Technologies and Engineering, Chinese Academy of Sciences, Ningbo; 315201, China
  • [ 8 ] [Xu, Junming]College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou; 310018, China
  • [ 9 ] [Qin, Huibin]College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou; 310018, China

Reprint 's Address：

  • [song, kaixin]college of electronic information and engineering, hangzhou dianzi university, hangzhou; 310018, china

Email：


kxsong@hdu.edu.cn
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Source ：

Materials Research Bulletin

ISSN： 0025-5408

Year： 2015

Volume： 70

Page： 309-314

2 . 4 3 5

JCR@2015

5 . 3 0 0

JCR@2023

ESI HC Threshold：335

JCR Journal Grade：2

CAS Journal Grade：3

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 10

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 0

Affiliated Colleges：

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