Aluminum　doped　zinc　oxide　(AZO)　thin　films　were　successfully　deposited　by　RF　magnetron　sputtering　method　on　quartz　substrate.　High　purity　ZnO-Al2O3　(purity:　99.95%,　Al2O3:　2wt.%)　target　was　used　as　source　material.　The　field　emission　and　electrical　conduction　characteristics　of　the　AZO　films　are　studied,　and　the　relationship　between　the　field　emission　characteristics　and　the　annealing　temperature　of　AZO　films　is　analyzed.　The　effects　of　different　annealing　temperatures　on　the　morphology,　electrical　conductivity　and　field　emission　properties　of　AZO　thin　films　are　discussed　in　detail.　The　results　of　atom　force　microscope　(AFM)　and　X-raydiffraction　(XRD)　results　show　that　all　samples　are　polycrystalline,　hexagonal　wurtzite　structure　with　oriention　in　the　(002)　crystallographic　direction,　while　the　surface　roughness　and　crystallinity　of　AZO　thin　films　are　increased　with　rising　annealing　temperature.　Meanwhile,　the　field　emission　properties　are　improved　by　annealing　at　different　temperatures.　As　for　the　AZO　films　deposited　at　the　annealing　temperature　of　300°C,　the　surface　roughness　is　the　largest　and　the　field　emission　characteristics　are　the　best,　whose　turn-on　field　is　as　low　as　2.8　V/μm.　The　uniform　and　stable　light　emission　and　excellent　conductivity　are　obtained,　where　the　light　luminance　reaches　650　cd/m2　and　the　resistivity　is　5.42×10-4　Ω·cm.