The　authors　report　the　study　of　＇thermal　droop＇　for　GaN-based　light-emitting　diodes　(LEDs)　using　a　single　AlGaN　layer　with　various　thicknesses　as　the　electron　blocking　layer　(EBL).　It　was　found　that　the　effect　of　bandgap　narrowing　at　elevated　temperatures　on　the　drop　of　LED　output　power　should　be　negligibly　smaller.　It　was　also　found　that　the　inserted　EBL　could　significantly　reduce　＇thermal　droop＇　due　to　the　effective　suppression　of　electron　overflow　at　elevated　temperatures.　Furthermore,　it　was　found　that　we　could　drastically　reduce　the　output　power　decrease　by　about　42%　with　a　properly　designed　EBL.　©　2014　IEEE.