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author:

Bharathi, B. (Bharathi, B..) [1] | Thanikaikarasan, S. (Thanikaikarasan, S..) [2] | Kollu, Pratap (Kollu, Pratap.) [3] | Chandrasekar, P.V. (Chandrasekar, P.V..) [4] | Sankaranarayanan, K. (Sankaranarayanan, K..) [5] | Shajan, X. Sahaya (Shajan, X. Sahaya.) [6]

Indexed by:

EI

Abstract:

Copper Sulphide thin films have been prepared on different substrates using electrodeposition technique. X-ray diffraction analysis showed that the prepared films possess polycrystalline in nature with cubic structure. Microstructural parameters such as crystallite size, strain and dislocation density are determined using X-ray diffraction data. Film composition and surface morphology have been analyzed using Scanning electron microscopy and Energy dispersive analysis by X-rays. Optical absorption analysis showed that the prepared films possess band gap value in the range between 2.2 and 2.4 eV for films obtained on different substrates. © 2014, Springer Science+Business Media New York.

Keyword:

Copper compounds Crystallite size Energy gap Film preparation Light absorption Morphology Scanning electron microscopy Substrates Sulfur compounds Surface morphology Thin films X ray powder diffraction

Community:

  • [ 1 ] [Bharathi, B.]Centre for Scientific and Applied Research, School of Basic Engineering and Sciences, PSN College of Engineering and Technology, Tirunelveli; Tamil Nadu; 627 152, India
  • [ 2 ] [Thanikaikarasan, S.]Centre for Scientific and Applied Research, School of Basic Engineering and Sciences, PSN College of Engineering and Technology, Tirunelveli; Tamil Nadu; 627 152, India
  • [ 3 ] [Kollu, Pratap]Department of Metallurgical Engineering and Materials Science, DST-INSPIRE Faculty, Indian Institute of Technology, Mumbai; Maharashtra; 400 076, India
  • [ 4 ] [Chandrasekar, P.V.]Centre for Scientific and Applied Research, School of Basic Engineering and Sciences, PSN College of Engineering and Technology, Tirunelveli; Tamil Nadu; 627 152, India
  • [ 5 ] [Chandrasekar, P.V.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou; 350 002, Taiwan
  • [ 6 ] [Sankaranarayanan, K.]School of Physics, Alagappa University, Karaikudi; Tamil Nadu; 630 004, India
  • [ 7 ] [Shajan, X. Sahaya]Centre for Scientific and Applied Research, School of Basic Engineering and Sciences, PSN College of Engineering and Technology, Tirunelveli; Tamil Nadu; 627 152, India

Reprint 's Address:

  • [thanikaikarasan, s.]centre for scientific and applied research, school of basic engineering and sciences, psn college of engineering and technology, tirunelveli; tamil nadu; 627 152, india

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Source :

Journal of Materials Science: Materials in Electronics

ISSN: 0957-4522

Year: 2014

Issue: 12

Volume: 25

Page: 5338-5344

1 . 5 6 9

JCR@2014

2 . 8 0 0

JCR@2023

ESI HC Threshold:355

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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