Field　emission　arrays　(FEAs)　were　fabricated　by　magnetron　sputtering,　photolithography,　wet　etching　technique　and　electrophoretic　deposition.　The　CNTs　cathodes　were　characterized　by　the　optical　microscopy,　field　emission　scanning　electron　microscopy　(FESEM)　and　Raman　spectra.　And　then,　its　field　emission　characteristics　based　on　planar-gate　triode　with　CNTs　emitters　were　also　investigated.　The　optical　microscopy　and　field　emission　scanning　electron　microscopy　(FESEM)　image　indicates　that　the　cathode　electrodes　and　gate　electrodes　were　interdigitated　and　paralleled　on　the　same　plane　and　CNTs　emitters　were　selectively　defined　on　the　cathode　in　this　triode　structure.　Its　field　emission　performance　shows　that　the　turn-on　voltage　of　planar-gate　triod　field　emission　cathode　with　CNTs　emitters　was　about　155　V　and　the　emission　current　came　to　286　μA.　The　field　emission　properties　were　completely　modulated　by　gate　voltage.　In　addition,　field　emission　properties　of　EPD　CNTs　and　scrren　printed　CNTs　cathode　were　compared.　The　results　indicate　that　the　EPD　CNTs　cathode　has　lower　turn-on　voltage　and　higer　luminescence　uniformity　than　that　of　the　screen　printed　CNTs　cathode.