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author:

Zhang, Yong-Ai (Zhang, Yong-Ai.) [1] (Scholars:张永爱) | Zeng, Xiang-Yao (Zeng, Xiang-Yao.) [2] | Zhou, Xiong-Tu (Zhou, Xiong-Tu.) [3] (Scholars:周雄图) | Zheng, Zhuo-Yong (Zheng, Zhuo-Yong.) [4] | Guo, Tai-Liang (Guo, Tai-Liang.) [5] (Scholars:郭太良)

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Abstract:

Biphenyltetracarboxylic dianhydride (BPDA) and 4, 4'-diaminodiphenyl ether (ODA) used as monomer reaction products and the polyimide (PI) dielectric films have been successfully fabricated via solution polycondensation. The structure and surface morphology of PI dielectric films prepared in different imidization temperature were characterized by XRD, SEM and FT-IR. The influence that the imidization temperature and powder content (BPDA and ODA) affected on the breakdown field was measured by current testing instrument with high resistance techniques. The experimental results show that polyimide acids (PAA) were completely aminated and become PI dielectric films with compact internal structure after imidization temperature of 300°C for 1h under vacuum environment of 1.0×10-2Pa. The breakdown field can reach up to 2.15MV/cm when powder content of BPDA and ODA was fixed to 5%, which indicates that PI dielectric films have good electrical properties.

Keyword:

Dielectric films Electric properties Ethers Polycondensation Polyimides

Community:

  • [ 1 ] [Zhang, Yong-Ai]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 2 ] [Zeng, Xiang-Yao]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 3 ] [Zhou, Xiong-Tu]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 4 ] [Zheng, Zhuo-Yong]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 5 ] [Guo, Tai-Liang]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China

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Source :

Journal of Functional Materials

ISSN: 1001-9731

CN: 50-1099/TH

Year: 2012

Issue: 23

Volume: 43

Page: 3201-3203,3207

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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