GaN-Based LEDs with sapphire debris removed by phosphoric etching - Details

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Abstract：

The　authors　proposed　a　simple　hot　phosphoric　etching　method　to　enhance　output　power　of　GaN-based　light-emitting　diodes　(LEDs)　by　34%.　By　immersing　the　sample　in　H3PO4　at　220°C　for　40　min,　it　was　found　that　debris　contaminants　induced　by　nanosecond　laser　scribing　could　be　effectively　removed.　It　was　also　found　that　the　hot　phosphoric　etching　method　will　not　degrade　electrical　characteristics　of　the　fabricated　LEDs.　©　2011　IEEE.

Keyword：

Debris Etching Gallium nitride III-V semiconductors Light emitting diodes Sapphire

Community：

[ 1 ] [Chang, Shoou-Jinn]Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
[ 2 ] [Kuo, D.S.]Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
[ 3 ] [Lam, K.T.]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
[ 4 ] [Wen, K.H.]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
[ 5 ] [Ko, T.K.]Nitride Device Research, Development Center, Epistar Corporation, Tainan 744, Taiwan
[ 6 ] [Hon, S.J.]Nitride Device Research, Development Center, Epistar Corporation, Tainan 744, Taiwan

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changsj@mail.ncku.edu.tw

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Source ：

IEEE Transactions on Components, Packaging and Manufacturing Technology

ISSN： 2156-3950

Year： 2012

Issue： 2

Volume： 2

Page： 349-353

1 . 2 6 1

JCR@2012

2 . 3 0 0

JCR@2023

JCR Journal Grade：2

CAS Journal Grade：3

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 9

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 1

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