Development of the parallel-gate structure of ZnO field emission display - Details

author：

Lin, Zhixian (Lin, Zhixian.) ^[1] | Guo, Tailiang (Guo, Tailiang.) ^[2] (Scholars：郭太良) | Zhang, Ting (Zhang, Ting.) ^[3]

Indexed by：

EI Scopus PKU CSCD

Abstract：

With　aging　treated　zinc　powder　as　raw　materials,　the　tetrapod-like　ZnO　material　was　prepared　by　high-temperature　vapour　phase　oxidation　method.　The　ZnO　field　emission　cathode　arrays　were　prepared　by　the　application　of　thick-film,　lithography　and　screen　printing　technologies.　The　cathode　plate　and　anode　plate　were　made　of　a　5　inch　(12.7　cm)　monochrome　parallel-gate　structure　field　emission　display　(FED)　panel　and　its　field　emission　performance　was　tested.　The　parameters　such　as　the　gate　voltage,　anode　voltage　as　well　as　cathode　thickness　which　affect　the　emission　performance　were　analyzed　and　discussed.　The　FED　can　achieve　full-screen　light　emission　by　driving　at　about　4000　V　anode　voltage　and　300　V　gate　voltage.　The　experimental　results　show　that　the　structure　of　ZnO　parallel-gate　structure　FED　has　a　good　regulation,　a　good　field　emission　performance　and　good　application　prospects.

Keyword：

Anodes Field emission Field emission cathodes Field emission displays II-VI semiconductors Optoelectronic devices Plates (structural components) Screen printing Thick films Threshold voltage Zinc oxide

Community：

[ 1 ] [Lin, Zhixian]College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian 350002, China
[ 2 ] [Guo, Tailiang]College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian 350002, China
[ 3 ] [Zhang, Ting]College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian 350002, China