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author:

Zhu, Y. (Zhu, Y..) [1] | Xu, R. (Xu, R..) [2] | Zhou, Y. (Zhou, Y..) [3] | Xu, Z. (Xu, Z..) [4] | Liu, Y. (Liu, Y..) [5] | Tian, F. (Tian, F..) [6] | Zheng, X. (Zheng, X..) [7] | Ma, F. (Ma, F..) [8] | Alsharafi, R. (Alsharafi, R..) [9] | Hu, H. (Hu, H..) [10] (Scholars:胡海龙) | Guo, T. (Guo, T..) [11] (Scholars:郭太良) | Kim, T.W. (Kim, T.W..) [12] | Li, F. (Li, F..) [13] (Scholars:李福山)

Indexed by:

Scopus

Abstract:

Achieving efficient white quantum dot light-emitting diodes (WQLEDs) is highly desired because of their promising applications in general illumination and display backlight systems. Herein, a highly efficient WQLED with an extremely low input voltage is reported, which is fabricated via an all-solution process by using an emitting layer with a mixture of red-, blue-, and green-emitting quantum dots. When a facile strategy of light outcoupling with an optical lens is introduced, the device shows a maximum external quantum efficiency of 28.4%, which is the highest value reported so far. Moreover, the device exhibits a standard white emission with International Commission on Illumination (CIE) coordinates of (0.36, 0.34) at an extremely low input voltage of 3.2 V. This work provides a promising way for achieving high-performance white quantum-dot light-emitting diodes with low driving voltage. © 2020 Wiley-VCH GmbH

Keyword:

high-efficiency; light outcoupling; low voltage; quantum dots; white light

Community:

  • [ 1 ] [Zhu, Y.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 2 ] [Xu, R.]Fuzhou Superlattice Science and Technology Co. Ltd., Fuzhou, 350116, China
  • [ 3 ] [Zhou, Y.]Fuzhou Superlattice Science and Technology Co. Ltd., Fuzhou, 350116, China
  • [ 4 ] [Xu, Z.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 5 ] [Liu, Y.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 6 ] [Tian, F.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 7 ] [Zheng, X.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 8 ] [Ma, F.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 9 ] [Alsharafi, R.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 10 ] [Hu, H.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 11 ] [Guo, T.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 12 ] [Kim, T.W.]Department of Electronic Engineering, Hanyang University, Seoul, 133-791, South Korea
  • [ 13 ] [Li, F.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China

Reprint 's Address:

  • 李福山

    [Li, F.]Institute of Optoelectronic Technology, Fuzhou UniversityChina

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Source :

Advanced Optical Materials

ISSN: 2195-1071

Year: 2020

9 . 9 2 6

JCR@2020

8 . 0 0 0

JCR@2023

ESI HC Threshold:196

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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