Abstract:
本文采用表面光电压谱,荧光光谱和吸收光谱等研究了不同的制备工艺条件对多孔硅的光电性质的影响.
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Year: 2001
Page: 130
Language: Chinese
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SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count: -1
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30 Days PV: 4
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