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Abstract:
用自制的设备制备了取向和无取向氧化铟纳米线,并研究了In2O3纳米线的场发射性质,发现取向纳米线比非取向纳米线有着更好的场发射特性.取向纳米线的开启和阈值场强明显低于非取向纳米线,这可能是由于取向纳米线之间的场屏蔽效应较弱以及取向纳米线有较多的顶部发射端的缘故.
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Source :
物理学报
ISSN: 1000-3290
CN: 11-1958/O4
Year: 2006
Issue: 11
Volume: 55
Page: 6136-6140
1 . 2 4 2
JCR@2006
0 . 8 0 0
JCR@2023
ESI Discipline: PHYSICS;
JCR Journal Grade:2
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 1
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