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author:

胡利勤 (胡利勤.) [1] | 林志贤 (林志贤.) [2] (Scholars:林志贤) | 郭太良 (郭太良.) [3] (Scholars:郭太良) | 姚亮 (姚亮.) [4] | 王晶晶 (王晶晶.) [5] | 杨春建 (杨春建.) [6] | 张永爱 (张永爱.) [7] (Scholars:张永爱) | 郑可炉 (郑可炉.) [8]

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CQVIP PKU CSCD

Abstract:

用自制的设备制备了取向和无取向氧化铟纳米线,并研究了In2O3纳米线的场发射性质,发现取向纳米线比非取向纳米线有着更好的场发射特性.取向纳米线的开启和阈值场强明显低于非取向纳米线,这可能是由于取向纳米线之间的场屏蔽效应较弱以及取向纳米线有较多的顶部发射端的缘故.

Keyword:

取向 场发射 纳米线 非取向

Community:

  • [ 1 ] [胡利勤]福州大学
  • [ 2 ] [林志贤]福州大学
  • [ 3 ] [郭太良]福州大学
  • [ 4 ] [姚亮]福州大学
  • [ 5 ] [王晶晶]福州大学
  • [ 6 ] [杨春建]福州大学
  • [ 7 ] [张永爱]福州大学
  • [ 8 ] [郑可炉]福州大学

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Source :

物理学报

ISSN: 1000-3290

CN: 11-1958/O4

Year: 2006

Issue: 11

Volume: 55

Page: 6136-6140

1 . 2 4 2

JCR@2006

0 . 8 0 0

JCR@2023

ESI Discipline: PHYSICS;

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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