In　this　work,　an　effective　method　is　proposed　to　enable　spatial　modulation　of　the　stiffness　of　elastic　substrate　through　selectively　controlling　the　formation　of　cross-linked　interpenetrating　network　(IPN).　The　IPN　structure　is　locally　growing　on　the　monomer-injected　elastomer　through　selective　ultraviolet　light　exposure,　and　the　Young＇s　modulus　of　selected　regions　can　be　significantly　enhanced　by　an　order　of　magnitude.　Further　experiments　and　finite　element　analysis　results　demonstrate　that　the　selective　region　exhibits　100%　strain　isolation　characteristic.　Finally,　a　metal　oxide　thin　film　transistor　(MOTFT)　array　is　integrated　on　the　substrates　exhibiting　negligible　performance　variation　under　100　%　tensile　strain　and　500　tensile　cycling.　Our　strategy　opens　up　a　promising　way　for　fabrication　of　stretchable　substrate.