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author:

Chen, Shenzhong (Chen, Shenzhong.) [1] | Yu, Jinling (Yu, Jinling.) [2] (Scholars:俞金玲) | Zhu, Kejing (Zhu, Kejing.) [3] | Zeng, Xiaolin (Zeng, Xiaolin.) [4] | Chen, Yonghai (Chen, Yonghai.) [5] | Liu, Yu (Liu, Yu.) [6] | Zhang, Yang (Zhang, Yang.) [7] | Cheng, Shuying (Cheng, Shuying.) [8] (Scholars:程树英) | He, Ke (He, Ke.) [9]

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EI SCIE

Abstract:

A hallmark signature of the three-dimensional (3D) topological insulator (TI) is that the spin-momentum locked massless Dirac fermions populate its surface states, where the carrier spins are locked to their momentum. Here, we report on the magnetic-field induced helicity dependent photogalvanic effect (MHPGE) of 3D TI thin films Bi2Te3 or (BixSb1-x)(2)Te-3 of different thicknesses excited by near-infrared (1064 nm) under an in-plane magnetic field. It is found that the MHPGE current J(cx) under the longitudinal geometry, i.e., J(cx) parallel to B-x, is induced by the Larmor procession, while that under the transverse geometry, i.e., J(cx) parallel to B-y, is mainly introduced by the hexagonal warping, which can be enhanced by the in-plane magnetic field. Our work demonstrates the possibility to tune the spin-polarized photocurrent of the surface states in 3D TIs via a magnetic field, which may be utilized to design new kinds of opto-spintronic devices. Published under an exclusive license by AIP Publishing.

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Community:

  • [ 1 ] [Chen, Shenzhong]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Yu, Jinling]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Cheng, Shuying]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Zhu, Kejing]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
  • [ 5 ] [He, Ke]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
  • [ 6 ] [Zeng, Xiaolin]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 7 ] [Chen, Yonghai]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 8 ] [Liu, Yu]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 9 ] [Zeng, Xiaolin]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 10 ] [Chen, Yonghai]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 11 ] [Liu, Yu]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 12 ] [Zhang, Yang]China Univ Min & Technol, Sch Mat Sci & Phys, Xuzhou 221116, Jiangsu, Peoples R China
  • [ 13 ] [Cheng, Shuying]Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolat Sci & E, Changzhou 213164, Jiangsu, Peoples R China

Reprint 's Address:

  • 俞金玲

    [Yu, Jinling]Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou 350108, Peoples R China;;[Chen, Yonghai]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China;;[Chen, Yonghai]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

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Source :

JOURNAL OF APPLIED PHYSICS

ISSN: 0021-8979

Year: 2021

Issue: 8

Volume: 130

2 . 8 7 7

JCR@2021

2 . 7 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:87

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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