Applying　high-k　dielectrics　can　effectively　reduce　the　operating　voltage　of　Organic　field-effect　transistors　(OFETs)　to　a　few　volts,　thus　significantly　miniaturizing　the　dynamic　power　consumption　of　OFETs.　Aluminum　oxide　is　a　promising　dielectric　material　due　to　its　high　permittivity　(k　=　6-9).　In　this　work,　a　simple,　low-cost,　low-temperature　(only　85　degrees　C)　solution　process　is　used　to　prepare　amorphous　AlOx　dielectric　thin　films　for　high-performance　flexible　OFET　applications.　The　AlOx　thin　film　was　spin-coated　and　then　solidified　using　deep　ultraviolet　irradiation　without　high-temperature　annealing.　The　as-deposited　AlOx　thin　film　has　a　root　mean　square　surface　roughness　of　0.47　nm　and　maintains　a　very　low　leakage　current　density　of　8　x　10(-9)　A/cm(2)　at　3.5　MV/cm　and　high　dielectric　constant　of　about　8.3　(at　1　kHz).　The　complete　OFET　based　on　this　dielectric　can　operate　at　a　3　V　gate　bias　with　saturation　mobility　of　1.8　cm(2)/Vs,　and　steep　sub-threshold　swing　of　110　mV/dec.　Our　work　demonstrated　a　low-temperature　solution　process　to　fabricate　a　high-k　metal　oxide　dielectric　for　low-power　OFET　applications.