The　advancement　and　challenges　of　field　effect　transistors　are　based　on　multi-gate　transistors　from　the　perspective　of　structure　and　material.　Multi-gate　field-effect　transistors　(Multi-gate　FET)　have　steeper　sub-threshold　slopes,　which　can　reduce　the　short　channel　effect　and　improve　mobility　and　drive　current.　A　fin　field-effect　transistor　(FinFET)　and　gate-all-around　field-effect　transistor　(GAAFET)　are　attractive　multi-gate　structures　most　compatible　with　today＇s　standard　machining　technologies.　As　the　future　moves　towards　smaller　processes,　FinFET　and　GAAFET　processes　limit　the　spacing　between　n-to-p　devices.　In　order　to　increase　the　possibility　of　transistor　miniaturization,　innovative　structures　such　as　Forksheet　FET　and　Complementary-FET　(CFET)　have　been　proposed.　©　2022　Institute　of　Physics　Publishing.　All　rights　reserved.