Organic　phototransistors　with　high　sensitivity　and　responsivity　to　light　irradiance　have　great　potential　applications　in　national　defense,　meteorology,　industrial　manufacturing,　and　medical　security.　However,　undesired　dark　current　and　photoresponsivity　limit　their　practical　applications.　Here,　a　novel　vertical　organic　phototransistor　combined　with　ferroelectric　materials　is　developed.　The　device　structure　has　nanometer　channel　length,　which　can　effectively　separate　photogenerated　carriers　and　reduce　the　probability　of　carrier　recombination　and　defect　scattering,　thus　improving　the　device　performance　of　phototransistors.　Moreover,　by　inserting　the　poly(vinylidene　fluoride-co-trifluoroethylene)　(P(VDF-TrFE))　ferroelectric　layer,　the　Schottky　barrier　at　the　interface　between　the　semiconductor　and　source　can　be　adjusted　by　the　polarization　of　the　external　electric　field,　which　can　effectively　reduce　the　dark　current　of　the　phototransistor　to　further　improve　the　device　performance.　Therefore,　our　phototransistors　exhibit　a　high　photoresponsivity　of　more　than　5.7　x　10(5)　A/W,　an　outstanding　detectivity　of　1.15　x　10(18)　Jones,　and　an　excellent　photosensitivity　of　5　x　10(7)　under　760　nm　light　illumination,　which　are　better　than　those　of　conventional　lateral　organic　phototransistors.　This　work　provides　a　new　approach　for　the　development　of　high-performance　phototransistors,　which　opens　a　new　pathway　for　organic　phototransistors　in　practical　application.