InGaN-based　micro-structured　light-emitting　diodes　(mu　LEDs)　play　a　critical　role　in　the　field　of　full-color　display.　In　this　work,　selected　area　growth　(SAG)　of　a　micro-pyramid　LED　array　was　performed　on　a　2-inch　wafer-scale　patterned　SiO2　template　(periodicity:　4　mu　m　diameter),　by　which　a　uniform　periodic　mu　LED　array　was　achieved.　The　single-element　pyramid-shaped　LED　exhibited　6　equivalent　semipolar　{1-101}　planes　and　a　size　of　about　5　mu　m,　revealing　a　good　crystalline　quality　with　screw　and　edge　dislocation　densities　of　8.27　x　10(7)　and　4.49　x　10(8)　cm(-2).　Due　to　the　stress-relaxation　out　of　the　SAG,　the　as-built　compressive　strain　was　reduced　to　0.59　GPa.　The　mu　LED　array　demonstrated　a　stable　emission,　confirmed　by　a　small　variation　of　electroluminescence　(EL)　peak　wavelength　over　a　wide　range　of　current　density　up　to　44.89　A/cm(2),　as　well　as　tiny　fluctuations　(within　1.9　nm)　in　the　EL　full　width　at　half　maximum.　The　photoluminescence　peak　wavelength　exhibits　a　good　uniformity　throughout　the　whole　wafer　with　a　discrete　probability　of　only　0.25%.