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author:

Qian, Fengsong (Qian, Fengsong.) [1] | Hu, Liangchen (Hu, Liangchen.) [2] | Wang, Qiuhua (Wang, Qiuhua.) [3] | Sun, Jie (Sun, Jie.) [4] (Scholars:孙捷) | Xie, Yiyang (Xie, Yiyang.) [5] | Xu, Chen (Xu, Chen.) [6]

Indexed by:

EI

Abstract:

We report a graphene-silicon-graphene-based photodetector with two opposite Schottky heterojunctions. Through the tuning of gate voltage, the device can obtain high photoconductivity gain and achieve excellent optical detection performance. © OSA 2021, © 2021 The Author(s)

Keyword:

Graphene Heterojunctions Photodetectors Photons Silicon

Community:

  • [ 1 ] [Qian, Fengsong]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Hu, Liangchen]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [Wang, Qiuhua]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
  • [ 4 ] [Sun, Jie]National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 5 ] [Xie, Yiyang]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
  • [ 6 ] [Xu, Chen]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China

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Year: 2021

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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