Gate-Controlled Schottky Heterojunctions Photodetector Based on Graphene-Silicon-Graphene - Details

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Abstract：

We　report　a　graphene-silicon-graphene-based　photodetector　with　two　opposite　Schottky　heterojunctions.　Through　the　tuning　of　gate　voltage,　the　device　can　obtain　high　photoconductivity　gain　and　achieve　excellent　optical　detection　performance.　©　2021　OSA.

Keyword：

Graphene Heterojunctions Optical fiber communication Optical fibers Photodetectors Photons Silicon

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[ 1 ] [Qian, Fengsong]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing; 100124, China
[ 2 ] [Hu, Liangchen]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing; 100124, China
[ 3 ] [Wang, Qiuhua]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing; 100124, China
[ 4 ] [Sun, Jie]Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou; 350116, China
[ 5 ] [Xie, Yiyang]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing; 100124, China
[ 6 ] [Xu, Chen]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing; 100124, China

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Gate-controlled schottky heterojunctions photodetector based on graphene-silicon-graphene
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Year： 2021

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 2

Affiliated Colleges：

物理与信息工程学院、微电子学院本学院/部未明确归属的数据

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