Direct　X-ray　detectors　are　considered　as　competitive　next-generation　X-ray　detectors　because　of　their　high　spatial　resolution,　high　sensitivity,　and　simple　device　configuration.　However,　their　potential　is　largely　limited　by　the　imperfections　of　traditional　materials,　such　as　the　low　crystallization　temperature　of　α-Se　and　the　low　atomic　numbers　of　α-Si　and　α-Se.　Here,　we　report　the　Sb2Se3　X-ray　thin-film　detector　with　a　p-n　junction　structure,　which　exhibited　a　sensitivity　of　106.3　µC/(Gyair·cm2)　and　response　time　of　2Se3,　such　as　the　average　atomic　number　of　40.8　and　μτ　product　(μ　is　the　mobility,　and　τ　is　the　carrier　lifetime)　of　1.29　×　10−5　cm2/V,　indicate　its　potential　for　application　in　X-ray　detection.　[Figure　not　available:　see　fulltext.].　©　2020,　Higher　Education　Press.