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Abstract:
本发明公开了一种Ga掺杂的水溶性InP量子点的制备方法,其是在以卤化锌为催化剂的条件下,将铟源与磷源经反应制成磷化铟核,然后掺入镓源以钝化磷化铟核内的缺陷,再在其表面包覆一层ZnS外壳,以提高量子点的稳定性以及发光效率,最后通过巯基类有机酸与量子点间强的结合力使其相互结合,进而制备出Ga掺杂的水溶性InP量子点。本发明制备的量子点不含Cd与Pb等重金属,对环境十分友好,并能溶于水,扩大了量子点的应用场景。
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Patent Info :
Type: 发明申请
Patent No.: CN202110848617.9
Filing Date: 2021-07-27
Publication Date: 2023-04-21 00:00:00
Pub. No.: CN113512416B
公开国别: 中国
Applicants: 福州大学;;闽都创新实验室
Legal Status: 授权
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ESI Highly Cited Papers on the List: 0 Unfold All
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30 Days PV: 3
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