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Inventor:

李福山 (李福山.) [1] (Scholars:李福山) | 陈祥 (陈祥.) [2] | 胡海龙 (胡海龙.) [3] (Scholars:胡海龙) | 赵等临 (赵等临.) [4] | 杨开宇 (杨开宇.) [5] (Scholars:杨开宇) | 郭太良 (郭太良.) [6] (Scholars:郭太良)

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incoPat

Abstract:

本发明公开了一种Ga掺杂的水溶性InP量子点的制备方法,其是在以卤化锌为催化剂的条件下,将铟源与磷源经反应制成磷化铟核,然后掺入镓源以钝化磷化铟核内的缺陷,再在其表面包覆一层ZnS外壳,以提高量子点的稳定性以及发光效率,最后通过巯基类有机酸与量子点间强的结合力使其相互结合,进而制备出Ga掺杂的水溶性InP量子点。本发明制备的量子点不含Cd与Pb等重金属,对环境十分友好,并能溶于水,扩大了量子点的应用场景。

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Patent Info :

Type: 发明申请

Patent No.: CN202110848617.9

Filing Date: 2021-07-27

Publication Date: 2023-04-21 00:00:00

Pub. No.: CN113512416B

公开国别: 中国

Applicants: 福州大学;;闽都创新实验室

Legal Status: 授权

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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