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author:

Jia, Yi (Jia, Yi.) [1] | Deng, Hui (Deng, Hui.) [2] | Lin, Xiao (Lin, Xiao.) [3] | Chen, Shenzhong (Chen, Shenzhong.) [4] | Xia, Yong (Xia, Yong.) [5] | Wu, Zhixu (Wu, Zhixu.) [6] | Yu, Jinling (Yu, Jinling.) [7] | Cheng, Shuying (Cheng, Shuying.) [8] | Lai, Yunfeng (Lai, Yunfeng.) [9]

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EI

Abstract:

Antimony sulfide (Sb2S3) with high absorption coefficient reveals great potential for photodetectors (PDs) in various fields of military and national economy. A new type of depleted Sb2S3 thin film photoconductive detector by using titanium dioxide (TiO2) interlayer with the structure of Au/(glass/TiO2:)Sb2S3/Au is designed. Compared with normal Au/Sb2S3/Au devices, the depleted Sb2S3 PDs obtain a higher switching ratio of 90, greatly enhancing responsivity and specific detectivity. Owing to the electric field of the depletion region, the response time significantly decreases from 23.2 to 0.6 ms. In addition, the anisotropic Sb2S3 film with [120] dominated horizontal orientation is suitable for polarized light detection. The peak-to-valley ratio of the depleted Sb2S3 PD reaches 1.3 at polarized light. The results and methods of this study are expected to expand the application of PDs based on Sb2S3 films. © 2021 Wiley-VCH GmbH

Keyword:

Antimony compounds Electric fields Gold compounds Light polarization Photoconductivity Photodetectors Photons Sulfur compounds Thin films Titanium dioxide

Community:

  • [ 1 ] [Jia, Yi]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Deng, Hui]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Deng, Hui]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 4 ] [Lin, Xiao]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 5 ] [Lin, Xiao]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 6 ] [Chen, Shenzhong]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 7 ] [Xia, Yong]Information Engineering School of Nanchang University, Nanchang; 330031, China
  • [ 8 ] [Wu, Zhixu]Information Engineering School of Nanchang University, Nanchang; 330031, China
  • [ 9 ] [Yu, Jinling]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 10 ] [Cheng, Shuying]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 11 ] [Cheng, Shuying]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 12 ] [Cheng, Shuying]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou; 213164, China
  • [ 13 ] [Lai, Yunfeng]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 14 ] [Lai, Yunfeng]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 15 ] [Lai, Yunfeng]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou; 213164, China

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Source :

Advanced Materials Interfaces

Year: 2022

Issue: 2

Volume: 9

5 . 4

JCR@2022

4 . 3 0 0

JCR@2023

ESI HC Threshold:91

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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