Zinc　oxide　(ZnO)　is　widely　used　as　an　electron　transport　layer　(ETL)　in　quantum　dot　light-emitting　diodes　(QLED)　because　of　its　advantages　of　appropriate　energy　level　and　the　simple　process　at　low　temperature.　However,　its　high　conductivity　and　abundant　surface　defects　have　become　essential　factors　limiting　the　development　of　QLED.　Here,　we　employ　sol-gel　derived　lithium　(Li)-doped　ZnO　(LZO)　film　as　an　ETL　for　inverted　red　QLED　to　achieve　low-cost　and　high-efficiency　QLED.　We　show　that　the　conduction　band　minimum,　the　density　of　oxygen　defects　and　conductivity　of　ZnO　can　be　tuned　by　Li-doping.　Consequently,　the　red　QLED　with　3　wt%　Li-doped　ZnO　ETL　exhibit　maximum　external　quantum　efficiency　(EQE)　and　current　efficiency　of　16.4%　and　24.1　cd/A,　respectively,　which　are　about　1.3-fold　greater　than　those　of　the　device　with　ZnO　ETL.　The　Li-doping　in　sol-gel　derived　ZnO　provides　a　feasible　strategy　for　low-cost　and　high-performance　inverted　QLEDs.