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author:

Lin, Xiao (Lin, Xiao.) [1] | Deng, Hui (Deng, Hui.) [2] | Jia, Yi (Jia, Yi.) [3] | Wu, Zhixu (Wu, Zhixu.) [4] | Xia, Yong (Xia, Yong.) [5] | Wang, Xingjian (Wang, Xingjian.) [6] | Chen, Siwei (Chen, Siwei.) [7] | Cheng, Yingshun (Cheng, Yingshun.) [8] | Zheng, Qiao (Zheng, Qiao.) [9] | Lai, Yunfeng (Lai, Yunfeng.) [10] | Cheng, Shuying (Cheng, Shuying.) [11]

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EI

Abstract:

Photodetectors (PDs) for weak light signal detection have wide applications for optical communication and imaging. Antimony sulfide (Sb2S3) as a nontoxic and stable light-sensitive material becomes a promising candidate for weak light PDs, which are developing in the direction of high response, high speed, and low cost. Herein, a self-powered Sb2S3PD with the structure of FTO/TiO2/Sb2S3/Au is developed to achieve weak light detection for 300-750 nm visible light. We control the Sb2S3thickness with about 460 nm to match depletion region width (438 nm) and obtain an excellent photoresponsivity and 3 dB bandwidth. Furtherly, we prepare pyramid structure polydimethylsiloxane (PDMS) on the illuminating surface to enhance the performance of weak light detection by light-trapping effects. The photocurrent of Sb2S3PD with 20 μm-sized PDMS texture achieves 13.6% improvement compared with the control one. Under weak 530 nm light illumination of 1 μW cm-2, the self-powered Sb2S3PD with PDMS achieves high responsivity (3.41 A W-1), large detectivity (2.84 × 1013Jones), and ultrafast speed (15 μs). The present Sb2S3PD and light-trapping strategy are expected to provide an alternative to future commercial weak light detection applications. © 2022 American Chemical Society. All rights reserved.

Keyword:

Antimony compounds Gold compounds Light Microchannels Photodetectors Photons Polydimethylsiloxane Signal detection Silicones Sulfur compounds Textures

Community:

  • [ 1 ] [Lin, Xiao]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 2 ] [Deng, Hui]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 3 ] [Deng, Hui]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 4 ] [Jia, Yi]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 5 ] [Wu, Zhixu]School of Information Engineering, Institute of Space Science and Technology, Nanchang University, Jiangxi, Nanchang; 330031, China
  • [ 6 ] [Xia, Yong]School of Information Engineering, Institute of Space Science and Technology, Nanchang University, Jiangxi, Nanchang; 330031, China
  • [ 7 ] [Wang, Xingjian]School of Information Engineering, Institute of Space Science and Technology, Nanchang University, Jiangxi, Nanchang; 330031, China
  • [ 8 ] [Chen, Siwei]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 9 ] [Cheng, Yingshun]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 10 ] [Zheng, Qiao]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 11 ] [Zheng, Qiao]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 12 ] [Lai, Yunfeng]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 13 ] [Lai, Yunfeng]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 14 ] [Cheng, Shuying]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 15 ] [Cheng, Shuying]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 16 ] [Cheng, Shuying]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou; 213164, China
  • [ 17 ] [Cheng, Shuying]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 18 ] [Cheng, Shuying]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 19 ] [Cheng, Shuying]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou; 213164, China

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Source :

ACS Applied Materials and Interfaces

ISSN: 1944-8244

Year: 2022

Issue: 10

Volume: 14

Page: 12385-12394

9 . 5

JCR@2022

8 . 5 0 0

JCR@2023

ESI HC Threshold:91

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 45

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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