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author:

Lin, Xiao (Lin, Xiao.) [1] (Scholars:林霄) | Deng, Hui (Deng, Hui.) [2] (Scholars:邓辉) | Jia, Yi (Jia, Yi.) [3] | Wu, Zhixu (Wu, Zhixu.) [4] | Xia, Yong (Xia, Yong.) [5] | Wang, Xingjian (Wang, Xingjian.) [6] | Chen, Siwei (Chen, Siwei.) [7] | Cheng, Yingshun (Cheng, Yingshun.) [8] | Zheng, Qiao (Zheng, Qiao.) [9] (Scholars:郑巧) | Lai, Yunfeng (Lai, Yunfeng.) [10] (Scholars:赖云锋) | Cheng, Shuying (Cheng, Shuying.) [11] (Scholars:程树英)

Indexed by:

EI SCIE

Abstract:

Photodetectors (PDs) for weak light signal detection have wide applications for optical communication and imaging. Antimony sulfide (Sb2S3) as a nontoxic and stable light-sensitive material becomes a promising candidate for weak light PDs, which are developing in the direction of high response, high speed, and low cost. Herein, a self-powered Sb2S3 PD with the structure of FTO/TiO2/Sb2S3/Au is developed to achieve weak light detection for 300-750 nm visible light. We control the Sb2S3 thickness with about 460 nm to match depletion region width (438 nm) and obtain an excellent photoresponsivity and 3 dB bandwidth. Furtherly, we prepare pyramid structure polydimethylsiloxane (PDMS) on the illuminating surface to enhance the performance of weak light detection by lighttrapping effects. The photocurrent of Sb2S3 PD with 20 mu m-sized PDMS texture achieves 13.6% improvement compared with the control one. Under weak 530 nm light illumination of 1 mu W cm(-2), the self-powered Sb2S3 PD with PDMS achieves high responsivity (3.41 A W-1), large detectivity (2.84 X 10(13) Jones), and ultrafast speed (15 its). The present Sb2S3 PD and light-trapping strategy are expected to provide an alternative to future commercial weak light detection applications.

Keyword:

depletion light trapping PDMS Sb2S3 photodetector self-powered weak light signal

Community:

  • [ 1 ] [Lin, Xiao]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Fujian, Peoples R China
  • [ 2 ] [Deng, Hui]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Fujian, Peoples R China
  • [ 3 ] [Jia, Yi]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Fujian, Peoples R China
  • [ 4 ] [Chen, Siwei]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Fujian, Peoples R China
  • [ 5 ] [Cheng, Yingshun]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Fujian, Peoples R China
  • [ 6 ] [Zheng, Qiao]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Fujian, Peoples R China
  • [ 7 ] [Lai, Yunfeng]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Fujian, Peoples R China
  • [ 8 ] [Cheng, Shuying]Fuzhou Univ, Coll Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou 350108, Fujian, Peoples R China
  • [ 9 ] [Wu, Zhixu]Nanchang Univ, Sch Informat Engn, Inst Space Sci & Technol, Nanchang 330031, Jiangxi, Peoples R China
  • [ 10 ] [Xia, Yong]Nanchang Univ, Sch Informat Engn, Inst Space Sci & Technol, Nanchang 330031, Jiangxi, Peoples R China
  • [ 11 ] [Wang, Xingjian]Nanchang Univ, Sch Informat Engn, Inst Space Sci & Technol, Nanchang 330031, Jiangxi, Peoples R China
  • [ 12 ] [Deng, Hui]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Fujian, Peoples R China
  • [ 13 ] [Zheng, Qiao]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Fujian, Peoples R China
  • [ 14 ] [Lai, Yunfeng]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Fujian, Peoples R China
  • [ 15 ] [Cheng, Shuying]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Fujian, Peoples R China
  • [ 16 ] [Cheng, Shuying]Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 213164, Peoples R China

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Source :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

Year: 2022

Issue: 10

Volume: 14

Page: 12385-12394

9 . 5

JCR@2022

8 . 5 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:91

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 51

SCOPUS Cited Count: 45

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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