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author：

Hu, X. (Hu, X..) [1] | Cai, J. (Cai, J..) [2] | Ye, Y. (Ye, Y..) [3] | Chen, E. (Chen, E..) [4] (Scholars：陈恩果) | Sun, J. (Sun, J..) [5] (Scholars：孙捷) | Yan, Q. (Yan, Q..) [6] | Guo, T. (Guo, T..) [7] (Scholars：郭太良)

Indexed by：

Scopus PKU CSCD

Abstract：

The　reduction　in　the　display　chip　size　of　micro　light　emitting　diode　(Micro-LED)　exerts　a　sidewall　effect　and　consequently　results　in　a　decreased　forward　light　extraction　efficiency　(LEE).　The　display　chip　structure　of　Micro-LED　with　high　LEE　still　needs　to　be　further　studied.　For　this　reason,　an　optimized　model　of　GaN-based　Micro-LED　with　high　LEE　is　explored　by　leveraging　the　finite-difference　time-domain　method　from　a　simulation　perspective.　Specifically,　the　initial　laminated　structure　of　GaN-based　Micro-LED　with　vertical　sidewalls　is　constructed,　and　the　influence　of　the　sidewall　effect　on　LEE　is　analyzed　quantitatively.　Then,　the　impact　of　the　position　change　of　multiple-quantum-well　active　layer　in　Micro-LED　on　the　light　output　effect　is　investigated,　and　Micro-LED　structure　models　with　different　inclined　sidewall　angles　are　analyzed.　The　influence　of　the　bottom　reflective　material　on　LEE　is　discussed,　and　the　parameters　of　the　preliminarily　optimized　GaN-based　Micro-LED　model　are　obtained.　Finally,　LEE　is　further　improved　by　designing　a　top　transmission　grating,　and　the　effects　of　period,　height,　and　duty　cycle　on　LEE　are　examined.　The　results　show　that　the　overall　LEE　of　the　optimized　GaN-based　Micro-LED　is　2.42　times　higher　than　that　of　the　initial　structure.　©　2022,　Chinese　Lasers　Press.　All　right　reserved.

Keyword：

Distributed Bragg reflector Finite-difference time-domain method Grating Light extraction efficiency Micro light emitting diode Optoelectronics

Community：

  • [ 1 ] [Hu, X.]National & Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Cai, J.]National & Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 3 ] [Ye, Y.]National & Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 4 ] [Chen, E.]National & Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 5 ] [Chen, E.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (Mindu Innovation Laboratory), Fuzhou, 350108, China
  • [ 6 ] [Sun, J.]National & Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 7 ] [Sun, J.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (Mindu Innovation Laboratory), Fuzhou, 350108, China
  • [ 8 ] [Yan, Q.]National & Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 9 ] [Yan, Q.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (Mindu Innovation Laboratory), Fuzhou, 350108, China
  • [ 10 ] [Guo, T.]National & Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 11 ] [Guo, T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (Mindu Innovation Laboratory), Fuzhou, 350108, China

Reprint 's Address：

  • 陈恩果

    [Chen, E.]National & Local United Engineering Laboratory of Flat Panel Display Technology, China;;[Chen, E.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (Mindu Innovation Laboratory)China

Email：


ceg@fzu.edu.cn |
ceg@fzu.edu.cn
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Source ：

光学学报

ISSN： 0253-2239

CN： 31-1252/O4

Year： 2022

Issue： 15

Volume： 42

1 . 6

JCR@2022

1 . 6 0 0

JCR@2023

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 6

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 0

Affiliated Colleges：

物理与信息工程学院、微电子学院 本学院/部未明确归属的数据

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