The　exploration　of　novel　photo/thermal-responsive　nonvolatile　memorizers　will　be　beneficial　for　energysaving　memories.　Herein,　new　＜　110　＞　-oriented　perovskites　using　single　template　melamine,　i.e.　,　[(MLAIH　2　)(Pb　X　4　)]　n　(　X　=　Br　(　alpha-　1　),　Cl　(　alpha-　2　),　MLAI　=　melamine)　have　been　prepared　and　their　structures　upon　irradiation　of　visible　light　have　been　investigated.　They　have　been　fabricated　as　nonvolatile　memory　devices　with　structures　of　ITO/[(MLAI-H　2　)(Pb　X　4　)]　n　/PMMA/Ag　(device-　1　:　X　=　Br,　device-　2　:　X　=　Cl),　which　can　exhibit　unique　visible　light-triggered　binary　nonvolatile　memory　performances.　Interestingly,　the　silent　or　working　status　can　be　monitored　by　visible　chromisms.　Furthermore,　the　light-triggered　binary　resistive　switching　mechanisms　of　these　ITO/[(MLAI-H　2　)(Pb　X　4　)]　n　/PMMA/Ag　memory　devices　have　been　clarified　in　terms　of　EPR,　fluorescence,　and　single-crystal　structural　analysis.　The　presence　of　light-activated　traps　in　＜　110　＞　-oriented　[(MLAI-H　2　)(Pb　X　4　)]　n　perovskites　are　dominated　in　the　appearance　of　light-triggered　resistive　switching　behaviors,　based　on　which　the　inverted　internal　electrical　fields　can　be　established.　According　to　the　structural　analysis,　the　more　distorted　Pb　X　6　octahedra,　higher　corrugated　＜　110　＞　-oriented　perovskite　sheets,　and　more　condensed　organic-inorganic　packing　in　Br-containing　perovskite　are　beneficial　for　the　stabilization　of　light-activated　traps,　which　lead　to　the　better　resistive　switching　behavior　of　device-　1　.　This　work　can　pave　a　new　avenue　for　the　establishment　of　novel　energy-saving　nonvolatile　memorizers　used　in　aerospace　or　military　industries.(c)　2023　Published　by　Elsevier　B.V.　on　behalf　of　Chinese　Chemical　Society　and　Institute　of　Materia　Medica,　Chinese　Academy　of　Medical　Sciences.