In　this　work,　a　novel　gallium　oxide　(Ga2O3)　vertical　FinFET　with　integrated　Schottky　barrier　diode　(SBD-FinFET),　which　achieves　low　conduction　losses,　is　proposed.　In　the　reverse　conduction　state,　the　integrated　SBD　can　provide　additional　low-resistance　path　to　conduct　reverse　current,　hence　achieving　low　reverse　conduction　loss.　In　the　switching　state,　the　SBD-FinFET　can　also　reduce　gate-drain　capacitance　and　gate　charge,　thus　featuring　fast　switching　speed　and　low　switching　losses.　Furthermore,　in　the　other　states,　the　integrated　SBD　of　the　SBD-FinFET　is　in　the　OFF　state,　which　does　not　significantly　affect　the　device　characteristics.　The　well-calibrated　simulation　results　show　that　when　compared　with　the　state-of-the-art　FinFET　with　integrated　Fin　channel　and　ohmic　contact　diode　(FOD-FinFET),　the　SBD-FinFET　can　reduce　reverse　conduction　loss,　turn-on　loss,　and　turn-off　loss　by　25%,　19%,　and　22%,　respectively,　while　other　characteristics　retain　almost　unchanged.