Artificial　neurons　have　good　application　prospects　as　efficient　processing　units　in　artificial　neural　morphology.　Indiun　galliun　zinc　oxide　(IGZO)　is　widely　used　in　artificial　synapses　and　artificial　neurons　due　to　its　high　reliability.　In　this　study,　we　propose　a　neural　device　based　on　IGZO　memristors　fabricated　by　the　solution　method,　owing　to　its　simple　process　steps,　no　vacuum　treatment　process,　rapid　film　formation,　easy　doping,　and　more　suitability　for　low-temperature　film　deposition　on　a　flexible　substrate,　as　well　as　compatibility　with　a　thin-film　transistor　(TFT).　The　influence　of　In,　Ga,　and　Zn　component　ratios　on　neuron　performance　is　investigated.　Indium　contributes　greatly　to　the　conductivity　of　the　device,　gallium　inhibits　the　formation　of　oxygen　vacancies,　and　zinc　has　a　large　impact　on　the　morphology　of　the　film,　all　of　which　impact　neuron　properties.　Finally,　we　successfully　simulate　the　integrate　and　fire　(IF)　characteristics　of　neurons　through　suitable　component　ratios　and　explore　the　difference　in　the　electrical　properties　of　the　devices　under　different　annealing　atmospheres.　The　solution-processed　IGZO-based　neurons　show　great　potential　for　neuromorphic　systems.