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author:

Chong, Peidian (Chong, Peidian.) [1] | Zhou, Ziwang (Zhou, Ziwang.) [2] | Li, Yafeng (Li, Yafeng.) [3] | Wang, Jianbiao (Wang, Jianbiao.) [4] | Xiu, Jieying (Xiu, Jieying.) [5] | Wei, Mingdeng (Wei, Mingdeng.) [6]

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Abstract:

In this contribution, a new three-dimensional (3D) structure of SnS2 with sulfur vacancies (S-SnS2)anchored on the surface of reduced graphene oxide (rGO) was synthesized via a facile solvothermal method. It was found that the addition of glycolic acid promoted the bonding of SnS2 with rGO, and enabling SnS2 to generate sulfur vacancies. As a result, the obtained unique 3D structure facilitated the rapid diffusion of lithium-ion and the S/N-doped rGO (NSG) enhanced the electronic conductivity of the S-SnS2/NSG. In detail, the S-SnS2/NSG as an anode in lithium-ion battery displayed a significant capacity of 1030.2 mA h g−1 at 0.5 A g−1 after 200 cycles. Even at a large current density of 5 A g−1, the S-SnS2/NSG retained an unsurpassed capacity of 790 mA h g−1 after 1000 cycles, demonstrating an ultrastable long cycling performance. © 2023 Elsevier B.V.

Keyword:

Anodes Graphene Ions IV-VI semiconductors Lithium-ion batteries Semiconducting tin compounds Sulfur compounds

Community:

  • [ 1 ] [Chong, Peidian]Fujian Key Laboratory of Electrochemical Energy Stor. Mater. Fuzhou University, Fuzhou; 350116, China
  • [ 2 ] [Zhou, Ziwang]Fujian Key Laboratory of Electrochemical Energy Stor. Mater. Fuzhou University, Fuzhou; 350116, China
  • [ 3 ] [Li, Yafeng]Fujian Key Laboratory of Electrochemical Energy Stor. Mater. Fuzhou University, Fuzhou; 350116, China
  • [ 4 ] [Wang, Jianbiao]Agency for Science, Technology and Research (ASTAR), Innovis, Institute of Materials Research and Engineering, 138634, Singapore
  • [ 5 ] [Xiu, Jieying]Fujian Key Laboratory of Electrochemical Energy Stor. Mater. Fuzhou University, Fuzhou; 350116, China
  • [ 6 ] [Wei, Mingdeng]Fujian Key Laboratory of Electrochemical Energy Stor. Mater. Fuzhou University, Fuzhou; 350116, China

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Source :

Journal of Alloys and Compounds

ISSN: 0925-8388

Year: 2023

Volume: 939

5 . 8

JCR@2023

5 . 8 0 0

JCR@2023

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 7

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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