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author:

Weng, Y. (Weng, Y..) [1] | Chen, G. (Chen, G..) [2] | Zhou, X. (Zhou, X..) [3] | Zhang, Y. (Zhang, Y..) [4] | Yan, Q. (Yan, Q..) [5] | Guo, T. (Guo, T..) [6]

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Scopus

Abstract:

The fabrication and performance of patterned quantum dot color conversion films are of great significance for μLED full color displays. In this work, TiO2 nanoparticles was designed and introduced to mix with quantum dots (QDs) as well as photoresist polymer to prepare the patterned quantum-dot photoresist (QDPR) films using direct photolithography, and to improve the color conversion efficiency (CCE) of QDPR. The results show that uniform QDPR films with controllable thickness and size could be achieved by optimizing the photolithography process parameters, whose minimum dimension can reach 12 μm. And the maximum CCE of patterned QDPR films was up to 67.46% with the thickness of only 4.28 μm. In addition, distributed Bragg reflector (DBR) and black matrix (BM) were employed to regulate the outgoing light and reduce the optical crosstalk, respectively. A color conversion device using a blue μLED and the QDPR films incorporated with DBR and BM have been demonstrated, with the color gamut of 120.53% NTSC, exhibiting the potential application for the next-generation high resolution full-color displays. © 2023 Elsevier B.V.

Keyword:

Color conversion Full color display Photolithography Quantum-dots μLED application

Community:

  • [ 1 ] [Weng Y.]Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
  • [ 2 ] [Chen G.]School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 3 ] [Zhou X.]School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 4 ] [Zhou X.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 5 ] [Zhang Y.]School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 6 ] [Zhang Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 7 ] [Yan Q.]School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 8 ] [Yan Q.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 9 ] [Guo T.]School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 10 ] [Guo T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China

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Source :

Journal of Luminescence

ISSN: 0022-2313

Year: 2023

Volume: 261

3 . 3

JCR@2023

3 . 3 0 0

JCR@2023

ESI HC Threshold:30

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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