The　fabrication　and　performance　of　patterned　quantum　dot　color　conversion　films　are　of　great　significance　for　mu　LED　full　color　displays.　In　this　work,　TiO2　nanoparticles　was　designed　and　introduced　to　mix　with　quantum　dots　(QDs)　as　well　as　photoresist　polymer　to　prepare　the　patterned　quantum-dot　photoresist　(QDPR)　films　using　direct　photolithography,　and　to　improve　the　color　conversion　efficiency　(CCE)　of　QDPR.　The　results　show　that　uniform　QDPR　films　with　controllable　thickness　and　size　could　be　achieved　by　optimizing　the　photolithography　process　parameters,　whose　minimum　dimension　can　reach　12　mu　m.　And　the　maximum　CCE　of　patterned　QDPR　films　was　up　to　67.46%　with　the　thickness　of　only　4.28　mu　m.　In　addition,　distributed　Bragg　reflector　(DBR)　and　black　matrix　(BM)　were　employed　to　regulate　the　outgoing　light　and　reduce　the　optical　crosstalk,　respectively.　A　color　conversion　device　using　a　blue　mu　LED　and　the　QDPR　films　incorporated　with　DBR　and　BM　have　been　demonstrated,　with　the　color　gamut　of　120.53%　NTSC,　exhibiting　the　potential　application　for　the　next-generation　high　resolution　full-color　displays.